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| EE-SY124 Dimensions Note: All units are in millimeters unless otherwise indicated. Photomicrosensor Features * Ultra-compact model with 1 mm sensing distance. (Reflective) Absolute Maximum Ratings (Ta = 25C) Item Emitter Forward current Pulse forward current Reverse voltage Detector Unless otherwise specified, the tolerances are 0.15 mm. Internal Circuit K C Symbol IF IFP VR VCEO VECO Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V 5V 20 mA 75 mW (see note 1) --25C to 85C --40C to 100C 260C (see note 3) Collector-Emitter voltage Emitter-Collector voltage Collector current IC Collector dissipation Ambient temperature Operating Storage Soldering temperature Note: PC Topr Tstg Tsol A E Terminal No. A K C E Name Anode Cathode Collector Emitter 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Ordering Information Description Photomicrosensor (Reflective) EE-SY124 Part number Electrical and Optical Characteristics (Ta = 25C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current IR P IL ID ILEAK VCE (sat) P tr tf Symbol VF Value 1.2 V typ., 1.4 V max. 0.01 A typ., 10 A max. 950 nm typ. 50 A min., 300 A max. IF = 20 mA VR = 4 V IF = 4 mA IF = 4 mA, VCE = 2 V Aluminum-deposited surface, d = 1 mm (see note) VCE = 10 V, 0 x IF =4 mA, VCE = 2 V with no reflection --VCE = 10 V VCC = 2 V, RL = 1 k, IL = 100 A VCC = 2 V, RL = 1 k, IL = 100 A Condition Dark current Leakage current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time Note: 2 nA typ., 200 nA max. 200 nA max. --930 nm typ. 35 s typ. 25 s typ. The letter "d" indicates the distance between the top surface of the sensor and the sensing object. EE-SY124 Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Collector dissipation Pc (mW) Forward current I F (mA) EE-SY124 Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 2 V d = 1 mm Sensing object: Aluminum-deposited surface Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C d = 1 mm Sensing object: Aluminum-deposited surface Light current I L ( A) Ambient temperature Ta (C) Forward current IF (mA) Light current IL ( A) Response time tr ( s) Collector--Emitter voltage VCE (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) Response Time vs. Load Resistance Characteristics (Typical) Relative light current I L (%) Dark Current ICEO (A) Ambient temperature Ta (C) Ambient temperature Ta (C) Light current IL (A) Response Time vs. Load Resistance Characteristics (Typical) Sensing Distance Characteristics (Typical) Light current I L ( A) TA = 25C IF = 4 mA VCE = 2 V d = 1 mm Sensing object: Aluminum-deposited surface Relative Light Current vs. Card Moving Distance (1) Relative light current IL (%) Card moving distance L (mm) Response time tr ( s) Light current IL (A) Distance d (mm) Relative Collector Current vs. Card Moving Distance (2) Relative light current IL (%) Response Time Measurement Circuit Input Output 90 % 10 % Input Output Card moving distance L (mm) NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4. R OMRON ELECTRONICS LLC One East Commerce Drive Schaumburg, IL 60173 OMRON CANADA, INC. 885 Milner Avenue Toronto, Ontario M1B 5V8 OMRON ON-LINE Global - http://www.omron.com USA - http://www.omron.com/oei Canada - http://www.omron.com/oci Printed in U.S.A. 847-882-2288 Cat. No. GC NAPMS-1 02/03 416-286-6465 Specifications subject to change without notice. |
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